Integrated circuit capacitor having antireflective dielectric

ABSTRACT

A capacitor ( 100 ) is disclosed that is formed as part of an integrated circuit (IC) fabrication process. The capacitor ( 100 ) has conductive top and bottom electrodes ( 140, 144 ) and a nonconductive capacitor dielectric ( 142 ). In one example, the dielectric ( 142 ) includes first and second thin dielectric layers ( 112, 114 ) that sandwich a layer of antireflective material ( 118 ). The thin layers ( 112, 114 ) provide the dielectric behavior necessary for the capacitor while the antireflective layer ( 118 ) promotes reduced feature sizes by mitigating reflected standing waves, among other things.

FIELD OF INVENTION

The present invention relates generally to semiconductor devices, andmore particularly to an integrated circuit capacitor where a dielectricof the capacitor comprises an antireflective material.

BACKGROUND OF THE INVENTION

It can be appreciated that several trends presently exist in theelectronics industry. Devices are continually getting smaller, fasterand require less power, while simultaneously being able to support andperform a greater number of increasingly complex and sophisticatedfunctions. One reason for these trends is an ever increasing demand forsmall, portable and multifunctional electronic devices. For example,cellular phones, personal computing devices, and personal sound systemsare devices which are in great demand in the consumer market. Thesedevices rely on one or more small batteries as a power source and alsorequire an ever increasing computational speed and storage capacity tostore and process data, such as digital audio, digital video, contactinformation, database data and the like.

Accordingly, there is a continuing trend in the semiconductor industryto manufacture integrated circuits (ICs) with higher device densities.To achieve such high densities, there has been and continues to beefforts toward scaling down dimensions (e.g., at submicron levels) onsemiconductor wafers. In order to accomplish such high densities,smaller feature sizes, smaller separations between features and layers,and/or more precise feature shapes are required, such as metalinterconnects or leads, for example. The scaling-down of integratedcircuit dimensions can facilitate faster circuit performance and/orswitching speeds, and can lead to higher effective yield in ICfabrication processes by providing more circuits on a semiconductor dieand/or more die per semiconductor wafer, for example,—where this alsosatisfies or furthers ongoing desires to streamline fabricationprocesses, enhance efficiency and/or reduce costs.

By way of example, high precision analog integrated circuits (IC's),such as analog-to-digital and digital-to-analog converters, for example,often require a number of capacitors for proper operation. Some of thecapacitor requirements in a true eighteen bit converter IC, for example,are a ratio stability of less than 0.00075% over 10 years, a voltagecoefficient of less than 10 ppm per volt, a temperature drift match ofless than 0.05% per degree Celsius, dielectric absorption of less than0.00075% and capacitance greater than 0.5 fF per square micrometer,among other things.

Such integrated circuit capacitors are generally formed as part of theIC fabrication process whereby a thin dielectric layer is establishedbetween two conductive plates. However, conventional IC fabricationtechniques, such as patterning and/or etching, for example, havelimitations as to the size and/or accuracy to which features can beproduced thereby. It would, therefore, be desirable to be able to formone or more integrated circuit capacitors in a cost effective mannerthat allows smaller feature sizes to be more accurately produced withoutcomplicating the fabrication process so that device scaling can befurthered.

SUMMARY OF THE INVENTION

The following presents a simplified summary of the invention in order toprovide a basic understanding of some aspects of the invention. Thissummary is not an extensive overview of the invention. It is intendedneither to identify key or critical elements of the invention nor todelineate the scope of the invention. Rather, its primary purpose ismerely to present one or more concepts of the invention in a simplifiedform as a prelude to the more detailed description that is presentedlater.

The present invention relates to forming an integrated circuit (IC)capacitor in an efficient manner that allows smaller feature sizes to bemore accurately produced. In particular, a layer of dielectric materialthat is utilized to establish a capacitor dielectric includesantireflective material. The antireflective material mitigates theoccurrence of certain phenomena, such as standing waves, for example,that can degrade the fidelity, accuracy and/or precision of fabricationtechniques, such as patterning and/or etching, for example. Thematerials utilized to form the layer of dielectric material are commonlyfound in IC fabrication process, and, as such, the capacitor can beaccurately and precisely produced in a cost effective manner that allowsfeature sizes to be reduced.

According to one or more aspects of the present invention, a method offorming a capacitor as part of an integrated circuit (IC) fabricationprocess is disclosed. The method includes providing a semiconductorsubstrate having a first layer of metallization formed thereon andforming a layer of antireflective dielectric material over the firstlayer of metallization. A second layer of metallization is then formedover the layer of antireflective dielectric material. The second layerof metallization, the layer of antireflective dielectric material andthe first layer of metallization are then patterned to establish thecapacitor which has a top conductive electrode formed from the secondlayer of metallization, a nonconductive capacitor dielectric formed fromthe layer of antireflective dielectric material and a bottom conductiveelectrode formed from the first layer of metallization.

According to one or more other aspects of the present invention, acapacitor is disclosed that is formed as part of an integrated circuit(IC) fabrication process. The capacitor includes a bottom conductiveelectrode formed on a semiconductor substrate, an antireflectivenonconductive capacitor dielectric formed over the bottom conductiveelectrode, and a top conductive electrode formed over the antireflectivenonconductive capacitor dielectric. The antireflective nonconductivecapacitor dielectric mitigates adverse effects associated withreflections associated with forming the bottom conductive electrode.

To the accomplishment of the foregoing and related ends, the followingdescription and annexed drawings set forth in detail certainillustrative aspects and implementations of the invention. These areindicative of but a few of the various ways in which one or more aspectsof the present invention may be employed. Other aspects, advantages andnovel features of the invention will become apparent from the followingdetailed description of the invention when considered in conjunctionwith the annexed drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a flow diagram illustrating an exemplary methodology forforming an integrated circuit (IC) capacitor in accordance with one ormore aspects of the present invention.

FIGS. 2–11 are cross-sectional illustrations of a capacitor being formedaccording to one or more aspects of the present invention, such as themethodology set forth in FIG. 1.

DETAILED DESCRIPTION OF THE INVENTION

One or more aspects of the present invention are described withreference to the drawings, wherein like reference numerals are generallyutilized to refer to like elements throughout, and wherein the variousstructures are not necessarily drawn to scale. It will be appreciatedthat where like acts, events, elements, layers, structures, etc. arereproduced, subsequent (redundant) discussions of the same may beomitted for the sake of brevity. In the following description, forpurposes of explanation, numerous specific details are set forth inorder to provide a thorough understanding of one or more aspects of thepresent invention. It may be evident, however, to one of ordinary skillin the art that one or more aspects of the present invention may bepracticed with a lesser degree of these specific details. In otherinstances, known structures are shown in diagrammatic form in order tofacilitate describing one or more aspects of the present invention.

Turning to FIG. 1, an exemplary methodology 10 is illustrated forforming a capacitor according to one or more aspects of the presentinvention, such as at a back end of a fabrication process, for example.Although the methodology 10 is illustrated and described hereinafter asa series of acts or events, it will be appreciated that the presentinvention is not limited by the illustrated ordering of such acts orevents. For example, some acts may occur in different orders and/orconcurrently with other acts or events apart from those illustratedand/or described herein. In addition, not all illustrated steps may berequired to implement a methodology in accordance with one or moreaspects of the present invention. Further, one or more of the acts maybe carried out in one or more separate acts or phases. It will beappreciated that a methodology carried out according to one or moreaspects of the present invention may be implemented in association withthe formation and/or processing of structures illustrated and describedherein as well as in association with other structures not illustratedor described herein.

The methodology 10 begins at 12 wherein a semiconductor substrate isprovided or obtained that has been processed through formation of afirst metallization layer. It is to be appreciated that substrate orsemiconductor substrate as used herein can include a base semiconductorwafer or any portion thereof (e.g., one or more wafer die) as well asany epitaxial layers or other type of semiconductor layers formedthereover and/or associated therewith. The substrate can comprise, forexample, silicon, SiGe, GaAs, InP and/or SOI. In addition, the substratecan include various device elements formed therein such as transistors,for example, and/or layers thereon. These can include metal layers,barrier layers, dielectric layers (e.g., inter level dielectric (ILD)),device structures, including silicon gates, word lines, source regions,drain regions, bit lines, bases, emitters, collectors, conductive lines,conductive vias, etc. The first metallization layer will serve as abottom electrode of the capacitor, and a layer of dielectric material isformed over the first metallization layer according to one or moreaspects of the present invention, where the layer of dielectric materialwill serve as a dielectric layer of the capacitor as well as anantireflective coating for patterning the first metallization layer.

FIG. 2 is a cross-sectional illustration of a semiconductor substrate102 processed through this point of the fabrication process. The firstmetallization layer 106 is formed over the substrate 102 and thedielectric layer 108 is formed over the first metallization layer 106.In the illustrated example, the layer of dielectric material 108comprises a sandwich of three materials, namely first and second layersof a thin dielectric (or non-conductive) material 112, 114 that sandwicha layer of antireflective material 118. The dielectric materials 112,114 are primarily responsible for providing the dielectric behaviorneeded for the capacitor, while the antireflective layer 118 isprimarily responsible for allowing the dielectric layer 108 to functionas an antireflective coating in patterning the first metallization layer106, thus streamlining the process (e.g., by not requiring a separatelayer of antireflective material—that has to be applied, patterned andremoved to pattern the first metallization layer 106). Nevertheless, thelayer of antireflective material 118 is also a dielectric such that ifthe composition and/or thickness of any of the three layers 112, 114,118 are altered, the dielectric properties and capacitor performance(e.g., capacitance and dielectric absorption) are affected. Similarly,changing the composition and/or thickness of any of the three layers112, 114, 118 also changes the reflectivity of the stack (e.g., itsantireflective behavior). In this manner, the sandwich of layers 112,114, 118 functions as a unit for both dielectric and antireflectivebehavior. As such, the dielectric layer 108 is sometimes referred to asa layer of antireflective dielectric material or a dielectric andantireflective sandwich.

It is to be appreciated that, while three layers 112, 114, 118 arepresented in the illustrated example, the antireflective dielectricmaterial 108 may merely comprise two layers, namely a predominatelydielectric layer, such as layer 114, overlying a predominatelyantireflective layer, such as layer 118. In this arrangement, however,both layers would again function as a unit contributing to both theantireflective and dielectric behavior of the antireflective dielectricmaterial 108, such that changing the thickness and/or composition ofeither of the layers would alter resulting dielectric properties andcapacitor performance. Stated another way, the layer of antireflectivedielectric material 108 comprises at least one layer, such as layer 118,that is substantially more absorbing than one or more other layers, suchas layers 112, 114, that are substantially more nonconductive(dielectric) than the absorbing (antireflective) layer.

It will be appreciated that the three part (or two part) dielectriclayer 108 can be efficiently formed since the materials comprising thislayer 108 are generally present in an integrated circuit (IC)fabrication process. By way of example, the first and third layers 112,114 of dielectric and antireflective sandwich 108 may comprise an oxidebased material (O) and may be formed to respective thicknesses ofbetween about 30 and about 100 Angstroms, for example. Similarly, thesecond layer 118 of dielectric and antireflective sandwich 108 maycomprise a silicon oxy-nitride material (SiON), for example, formed to athickness of between about 150 and about 500 Angstroms, for example.Additionally, the first metallization layer 106 may comprise one or morelayers of conductive material. By way of example, the firstmetallization layer 106 may comprise an about 500 Angstrom layer oftitanium nitride (TiN) overlying an about 200 Angstrom layer of Titanium(Ti) that overlies an about 5 kilo Angstrom layer of Aluminum (Al)and/or copper (Cu) overlying an about 140 Angstrom layer of titanium(Ti) that overlies the semiconductor substrate 102.

The methodology 10 then advances to 14 where a second metallizationlayer 122 is formed over the dielectric layer 108. The secondmetallization layer 122 will serve as a top electrode of the capacitor.As with the first metallization layer 106, the second metallizationlayer 122 may comprise any one or more suitable conductive materials,such as titanium (Ti), tantalum (Ta), titanium nitride (TiN), tantalumnitride (TiN), etc. formed to a thickness of between about 500 Angstromsand about 3 kilo Angstroms, for example (FIG. 3). A layer of hardmaskmaterial 126 is then formed over the second metallization layer 122 at16 (FIG. 4). The hardmask layer 126 can, for example, be formed of anitride and/or oxide based material (Ni, O) to a thickness of betweenabout 200 Angstroms and about 500 Angstroms.

A first layer of resist material 130 is then formed over the hardmasklayer 126 at 18 (FIG. 5). The resist material 130 is a radiationsensitive material that facilitates patterning the hardmask layer 126and second metallization layer 122. More particularly, the resistmaterial 130, hardmask layer 126 and second metallization layer 122 can,at least in part, be patterned with lithographic techniques, wherelithography refers to processes for transferring one or more patternsbetween various media. In lithography, a radiation sensitive resistcoating is formed over one or more layers to which a pattern is to betransferred. The resist is itself first patterned by exposing it totype(s) of radiation, where the radiation (selectively) passes throughan intervening mask containing the pattern. As a result, the exposed orunexposed areas of the resist coating become more or less soluble,depending on the type of resist used. A developer is then used to removethe more soluble areas leaving the patterned resist. The pattered resistcan then serve as a mask for the underlying layers which can beselectively etched to transfer the pattern thereto.

Accordingly, the resist layer 130 (at times referred to as a photoresistdue to its sensitivity to radiation) is then patterned at 20 viaselective exposure to radiation and subsequent exposure to a developer(FIG. 6). The hardmask layer 126 and second metallization layer 122 arethen patterned with the patterned first photoresist layer 130 serving asa mask at 22 (FIG. 7). It will be appreciated that the hardmask layer126 and second metallization layer 122 may be patterned in a multistageprocess comprising a dry etch followed by a wet etch. Such an etchingprocess is described in U.S. Pat. No. 6,686,237, which is assigned tothe assignee of the present application, and which is herebyincorporated by reference in its entirety. In particular, the hardmasklayer 126 is generally etched by a dry etching process followed by a(directional) wet etch that etches the second metallization layer 122.This promotes a “soft landing” on the dielectric layer 108 so as to notdisturb or damage the upper layer of dielectric material 114, which canbe a mere 50 Angstroms thick, for example. It is important to preservethis layer as well as the other layers 112, 118 of the dielectric layer108 to maintain the dielectric properties for the capacitor as well asthe antireflective behavior needed to accurately pattern the firstmetallization layer 106.

The patterned first resist layer 130 is then stripped and a second layerof resist material 134 is formed over the patterned hardmask layer 126and second metallization layer 122 at 24 (FIG. 8). The secondphotoresist layer 134 is patterned at 26 with the dielectric layer 108serving as an antireflective coating for the first metallization layer106 (FIG. 9). More particularly, the antireflective layer 118 of thetri-layer dielectric layer 108 has light attenuating properties whichmitigate phenomena known as standing waves, among other things, that maydevelop as photolithographic radiation that is used to pattern thesecond resist layer 134 is reflected by the first metallization layer106, where such standing waves can degrade the fidelity of patterntransfers by causing more or less of the second photoresist layer 134 tobecome more or less soluble, depending upon the type of resist materialutilized.

At 28, the dielectric layer 108 and the first metallization layer 106are patterned with the patterned second resist layer 134 serving as amask or template (FIG. 10). Finally, the patterned second resist layer134 is removed at 30 (FIG. 11). As such, the capacitor 100 is defined onthe substrate 102 having a capacitor top electrode 140, a capacitordielectric 142 and a capacitor bottom electrode 144. It will beappreciated that other capacitive elements 101 may similarly persist onthe substrate 102, where remaining portions of the conductive first andsecond metallization layers 106, 122 are separated by remaining portionsof the nonconductive dielectric layer 108.

The methodology 10 may then advance for further back end processing (notshown), where, for example, a layer of oxide material may be formed overthe entire structure. Such an oxide layer may comprise, for example,silicon oxide based dielectrics and/or OSG materials or any othersuitable materials formed to a thickness of between about 4000 to about8000 Angstroms, for example. Additionally, further patterning can beperformed as well as forming conductive contacts down to conductivelayers. Remaining portions of the second metallization layer 122 can,for example, be used to establish metal interconnects. Further, forminga capacitor in the manner described herein, e.g., by incorporating theantireflective dielectric layer 118, would allow such metal interconnectlines or leads to be formed at dimensions (e.g., diameter or width) of aquarter (0.25) micron or below.

By way of further example, an exemplary capacitor may have any one ormore of the following characteristics:

-   -   the first layer of thin dielectric material 112 has a thickness        of about 75 Angstroms;    -   the layer of antireflective material 118 has a thickness of        about 200 Angstroms;    -   the second layer of thin dielectric material 114 has a thickness        of about 75 Angstroms;    -   the layer of dielectric material 108 has a thickness of about        350 Angstroms;    -   the hardmask is a nitride based material (Nit) having a        thickness of about 300 Angstroms;    -   the capacitor density is 1.23 fF/um²;    -   the capacitor density has a standard deviation of 0.01;    -   the breakdown voltage is 25.77 volts at 1 milli-amp;    -   the breakdown voltage has a standard deviation of 0.3;    -   current leakage is −18.23 amps per square micrometer at 5.5.        volts;    -   current leakage has a standard deviation of 0.04 at 5.5 volts;    -   current leakage is −18.15 amps per square micrometer at 8.8        volts;    -   current leakage has a standard deviation of 0.02 at 8.8 volts;    -   Vcc quad is −6.00 ppM;    -   Vcc linear is 6.50 ppM;    -   D.A. is 200 ppM; and    -   reflectivity percentage is 1.23, or between about 0 and about        1.45.

It will be appreciated that while reference is made throughout thisdocument to exemplary structures in discussing aspects of methodologiesdescribed herein (e.g., those structures presented in FIGS. 2–11 whilediscussing the methodology set forth in FIG. 1), that thosemethodologies are not to be limited by the corresponding structurespresented. Rather, the methodologies (and structures) are to beconsidered independent of one another and able to stand alone and bepracticed without regard to any of the particular aspects depicted inthe Figs.

Further, from time to time throughout this specification and the claimsthat follow, one or more layers or structures may be described as beingor containing a substance such as “titanium, tantalum”, “siliconnitride”, etc. These description are to be understood in context and asthey are used in the semiconductor manufacturing industry. For example,in the semiconductor industry, when a metallization layer is describedas containing copper, it is understood that the metal of the layercomprises pure copper as a principle component, but the pure copper maybe, and typically is, alloyed, doped, or otherwise impure. As anotherexample, silicon nitride may be a silicon rich silicon nitride or anoxygen rich silicon nitride. Silicon nitride may contain some oxygen,but not so much that the material's dielectric constant is substantiallydifferent from that of high purity stoichiometric silicon nitride.

Although one or more aspects of the invention has been shown anddescribed with respect to one or more implementations, equivalentalterations and modifications will occur to others skilled in the artbased upon a reading and understanding of this specification and theannexed drawings. The invention includes all such modifications andalterations and is limited only by the scope of the following claims. Inaddition, while a particular feature or aspect of the invention may havebeen disclosed with respect to only one of several implementations, suchfeature or aspect may be combined with one or more other features oraspects of the other implementations as may be desired and/oradvantageous for any given or particular application. Furthermore, tothe extent that the terms “includes”, “having”, “has”, “with”, orvariants thereof are used in either the detailed description or theclaims, such terms are intended to be inclusive in a manner similar tothe term “comprising.”

Also, the term “exemplary” is merely meant to mean an example, ratherthan the best. It is also to be appreciated that layers and/or elementsdepicted herein are illustrated with particular dimensions relative toone another (e.g., layer to layer dimensions and/or orientations) forpurposes of simplicity and ease of understanding, and that actualdimensions of the elements may differ substantially from thatillustrated herein. Additionally, unless stated otherwise and/orspecified to the contrary, any one or more of the layers set forthherein can be formed in any number of suitable ways, such as withspin-on techniques, sputtering techniques (e.g., magnetron and/or ionbeam sputtering), (thermal) growth techniques and/or depositiontechniques such as chemical vapor deposition (CVD), physical vapordeposition (PVD) and/or plasma enhanced chemical vapor deposition(PECVD), or atomic layer deposition (ALD), for example, and can bepatterned in any suitable manner (unless specifically indicatedotherwise), such as via etching and/or lithographic techniques, forexample.

1. A method of forming a capacitor as part of an integrated circuit (IC)fabrication process, comprising: providing a semiconductor substratehaving a first layer of metallization formed thereon; forming a layer ofantireflective dielectric material over the first layer ofmetallization, wherein the layer of antireflective dielectric materialcomprises a layer of antireflective material sandwiched between a firstlayer of dielectric material and a second layer of dielectric material;forming a second layer of metallization over the layer of antireflectivedielectric material; and patterning the second layer of metallization,the layer of antireflective dielectric material and the first layer ofmetallization to establish the capacitor which has a top conductiveelectrode formed from the second layer of metallization, a nonconductivecapacitor dielectric formed from the layer of antireflective dielectricmaterial and a bottom conductive electrode formed from the first layerof metallization.
 2. The method of claim 1, wherein at least one of; thefirst layer of metallization comprises an about 500 Angstrom layer oftitanium nitride (TiN) overlying an about 200 Angstrom layer of Titanium(Ti) that overlies an about 5 kilo Angstrom layer of Aluminum (Al)and/or copper (Cu) overlying an about 140 Angstrom layer of titanium(Ti) that overlies the semiconductor substrate, the first layer ofdielectric material is formed to a thickness of between about 30 andabout 100 Angstroms, the second layer of dielectric material is formedto a thickness of between about 30 and about 100 Angstroms, the layer ofantireflective material is formed to a thickness of between about 150and about 500 Angstroms, the first layer of dielectric materialcomprises an oxide based material (O), the second layer of dielectricmaterial comprises an oxide based material (O), the layer ofantireflective material comprises a silicon oxy-nitride based material(SiON), the second layer of metallization comprises at least one oftitanium (Ti), tantalum (Ta), titanium nitride (TiN) and tantalumnitride (TaN) based materials, the second layer of metallization isformed to a thickness of between about 500 Angstroms and about 3 kiloAngstroms, the capacitor has a capacitive density of about 1.23, and thecapacitor has a reflectivity of about 1.23.
 3. The method of claim 1,further comprising: forming a conductive contact to the capacitor havinga diameter or width of a quarter (0.25) micron or below.
 4. A method offorming a capacitor as part of an integrated circuit (IC) fabricationprocess, comprising: providing a semiconductor substrate having a firstlayer of metallization formed thereon; forming a layer of antireflectivedielectric material over the first layer of metallization; forming asecond layer of metallization over the layer of antireflectivedielectric material; patterning the second layer of metallization, thelayer of antireflective dielectric material and the first layer ofmetallization to establish the capacitor which has a top conductiveelectrode formed from the second layer of metallization, a nonconductivecapacitor dielectric formed from the layer of antireflective dielectricmaterial and a bottom conductive electrode formed from the first layerof metallization; forming a layer of hardmask material over the secondlayer of metallization; forming a first layer of resist material overthe layer of hardmask material; patterning the first layer of resistmaterial; and patterning the layer of hardmask material and the secondlayer of metallization with the patterned first layer of resist materialserving as a mask.
 5. The method of claim 4, wherein patterning thelayer of hardmask material and the second layer of metallization isperformed in a multistage process so as to come to a soft landing on thelayer of antireflective dielectric material.
 6. The method of claim 5,wherein patterning the layer of hardmask material and the second layerof metallization comprises a dry etch followed by a wet etch.
 7. Themethod of claim 6, wherein the layer of hardmask material is patternedby the dry etch and the second layer of metallization is patterned bythe wet etch.
 8. The method of claim 7, further comprising: forming asecond layer of resist material over the patterned layer of hardmaskmaterial and second layer of metallization; patterning the second layerof resist material with the layer of antireflective material serving toattenuate radiation used to pattern the second layer of resist materialthat is reflected by the first layer of metallization; and patterningthe layer of antireflective dielectric material and the first layer ofmetallization with the patterned second layer of resist material servingas a mask.
 9. The method of claim 4, further comprising: forming asecond layer of resist material over the patterned layer of hardmaskmaterial and second layer of metallization; patterning the second layerof resist material with the layer of antireflective material serving toattenuate radiation used to pattern the second layer of resist materialthat is reflected by the first layer of metallization; and patterningthe layer of antireflective dielectric material and the first layer ofmetallization with the patterned second layer of resist material servingas a mask.
 10. The method of claim 5, further comprising: forming asecond layer of resist material over the patterned layer of hardmaskmaterial and second layer of metallization; patterning the second layerof resist material with the layer of antireflective material serving toattenuate radiation used to pattern the second layer of resist materialthat is reflected by the first layer of metallization; and patterningthe layer of antireflective dielectric material and the first layer ofmetallization with the patterned second layer of resist material servingas a mask.
 11. The method of claim 6, further comprising: forming asecond layer of resist material over the patterned layer of hardmaskmaterial and second layer of metallization; patterning the second layerof resist material with the layer of antireflective material serving toattenuate radiation used to pattern the second layer of resist materialthat is reflected by the first layer of metallization; and patterningthe layer of antireflective dielectric material and the first layer ofmetallization with the patterned second layer of resist material servingas a mask.
 12. The method of claim 4, wherein the layer ofantireflective dielectric material comprises a layer of antireflectivematerial sandwiched between a first layer of dielectric material and asecond layer of dielectric material and wherein at least one of; thefirst layer of metallization comprises an about 500 Angstrom layer oftitanium nitride (TiN) overlying an about 200 Angstrom layer of Titanium(Ti) that overlies an about 5 kilo Angstrom layer of Aluminum (Al)and/or copper (Cu) overlying an about 140 Angstrom layer of titanium(Ti) that overlies the semiconductor substrate, the first layer ofdielectric material is formed to a thickness of between about 30 andabout 100 Angstroms, the second layer of dielectric material is formedto a thickness of between about 30 and about 100 Angstroms, the layer ofantireflective material is formed to a thickness of between about 150and about 500 Angstroms, the first layer of dielectric materialcomprises an oxide based material (O), the second layer of dielectricmaterial comprises an oxide based material (O), the layer ofantireflective material comprises a silicon oxy-nitride based material(SiON), the second layer of metallization comprises at least one oftitanium (Ti), tantalum (Ta), titanium nitride (TiN) and tantalumnitride (TaN) based materials, the second layer of metallization isformed to a thickness of between about 500 Angstroms and about 3 kiloAngstroms, the capacitor has a capacitive density of about 1.23, and thecapacitor has a reflectivity of about 1.23.
 13. The method of claim 8,wherein the layer of antireflective dielectric material comprises alayer of antireflective material sandwiched between a first layer ofdielectric material and a second layer of dielectric material andwherein at least one of; the first layer of metallization comprises anabout 500 Angstrom layer of titanium nitride (TiN) overlying an about200 Angstrom layer of Titanium (Ti) that overlies an about 5 kiloAngstrom layer of Aluminum (Al) and/or copper (Cu) overlying an about140 Angstrom layer of titanium (Ti) that overlies the semiconductorsubstrate, the first layer of dielectric material is formed to athickness of between about 30 and about 100 Angstroms, the second layerof dielectric material is formed to a thickness of between about 30 andabout 100 Angstroms, the layer of antireflective material is formed to athickness of between about 150 and about 500 Angstroms, the first layerof dielectric material comprises an oxide based material (O), the secondlayer of dielectric material comprises an oxide based material (O), thelayer of antireflective material comprises a silicon oxy-nitride basedmaterial (SiON), the second layer of metallization comprises at leastone of titanium (Ti), tantalum (Ta), titanium nitride (TiN) and tantalumnitride (TaN)( ) based materials, the second layer of metallization isformed to a thickness of between about 500 Angstroms and about 3 kiloAngstroms, the capacitor has a capacitive density of about 1.23, and thecapacitor has a reflectivity of about 1.23.
 14. The method of claim 5,wherein the layer of antireflective dielectric material comprises alayer of antireflective material sandwiched between a first layer ofdielectric material and a second layer of dielectric material andwherein at least one of; the first layer of metallization comprises anabout 500 Angstrom layer of titanium nitride (TiN) overlying an about200 Angstrom layer of Titanium (Ti) that overlies an about 5 kiloAngstrom layer of Aluminum (Al) and/or copper (Cu) overlying an about140 Angstrom layer of titanium (Ti) that overlies the semiconductorsubstrate, the first layer of dielectric material is formed to athickness of between about 30 and about 100 Angstroms, the second layerof dielectric material is formed to a thickness of between about 30 andabout 100 Angstroms, the layer of antireflective material is formed to athickness of between about 150 and about 500 Angstroms, the first layerof dielectric material comprises an oxide based material (O), the secondlayer of dielectric material comprises an oxide based material (O), thelayer of antireflective material comprises a silicon oxy-nitride basedmaterial (SiON), the second layer of metallization comprises at leastone of titanium (Ti), tantalum (Ta), titanium nitride (TiN) and tantalumnitride (TaN) based materials, the second layer of metallization isformed to a thickness of between about 500 Angstroms and about 3 kiloAngstroms, the capacitor has a capacitive density of about 1.23, and thecapacitor has a reflectivity of about 1.23.